We demonstrate for the first time the successful layer transfer of an epitaxially grown monocrystalline Si film from a purely chemically etched porous Si substrate of 150 mm diameter to a glass carrier. The surface ...

We discuss the lift-off of free-standing epitaxially grown silicon layers from the porous silicon (PSI) process, which is a kerfless wafering technology. The lift-off is a crucial step in the PSI cycle. A high-porosity ...

We combine two kerfless approaches to unite advantages of both processes: the epitaxial layer transfer based on porous silicon (PSI process) and the lift-off of a thin silicon layer from a substrate via controlled spalling ...